型号:

BSS84V-7

RoHS:无铅 / 符合
制造商:Diodes Inc描述:MOSFET P-CH DUAL SOT-563
详细参数
数值
产品分类 分离式半导体产品 >> FET - 阵列
BSS84V-7 PDF
标准包装 1
系列 -
FET 型 2 个 P 沟道(双)
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 50V
电流 - 连续漏极(Id) @ 25° C 130mA
开态Rds(最大)@ Id, Vgs @ 25° C 10 欧姆 @ 100mA,5V
Id 时的 Vgs(th)(最大) 2V @ 1mA
闸电荷(Qg) @ Vgs -
输入电容 (Ciss) @ Vds 45pF @ 25V
功率 - 最大 150mW
安装类型 表面贴装
封装/外壳 SOT-563,SOT-666
供应商设备封装 SOT-563
包装 剪切带 (CT)
其它名称 BSS84V-7CT
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